As Complementary Metal Oxide Semiconductor (CMOS) devices
continue to shrink, the traditional thin silicon dioxide (SiO2) result in the
increase of tunneling current. A substantial increase of gate leakage
current , and formation of the so-called tunneling effect. The high
dielectric constant materials have been used to can effectively improve
the occurrence of leakage current.Metal gate use the metal nitride to
replace the poly-Si because it have high thermal stability, low gate sheet
resistance and higher compatibility with high-k gate dielectric materials.
In this experiment ,we use metal organic chemical vapor deposition
(MOCVD) system depositing the HfSiO film. A metal mask be placed on
the sample surface and go through TiN metal sputtering by FSE Cluster
Physical vapor deposition system. The deposition of TiN is used as the
positive electrodes. Explore the process of metal gate high-k film effects.
TEM observed the interfacial quality between hafnium and silicon
substrate. The electrical sample was constructed from MIS capacitor. The
metal gate in different thickness and changes was measured by C-V curve
and J-V curve.
The results showed that the interfacial layer between HfSiO and Si
substrate. With N2 treatment, the interfacial layer can be inhibited and
found good effect. Besides, it can significantly reduce the interface
defects and improve device performance.
