利用電子迴旋共振化學氣相沉積(ECR-CVD)法製備三項具有特異性之Bi2Se3,SnTe及WTe2拓樸絕緣奈米結構體並探討其光電特性及先進光偵測之開拓潛力

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 研究計畫 > Item 987654321/51478

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題名:	利用電子迴旋共振化學氣相沉積(ECR-CVD)法製備三項具有特異性之Bi2Se3,SnTe及WTe2拓樸絕緣奈米結構體並探討其光電特性及先進光偵測之開拓潛力 Investigation of the Optoelectronic Properties and the Advanced Photodetector Application of the Three Distinctive Bi2se3, Snte, and Wte2 Topological Insulating Nanostructures as Fabricated by the Ecr-Cvd Process
作者:	施漢章
貢獻者:	化學工程與材料工程學系奈米材料碩士班
關鍵詞:	硒化鉍銀表面電漿共振效應光電流 Bi2Se3 Ag surface plasmon resonance photocurrent
日期:	2021
上傳時間:	2023-03-10 10:02:35 (UTC+8)
摘要:	Bi2Se3是一種材料表面具導電性而內部為絕緣體的拓樸絕緣體量子材料。因其具有窄能隙、導電表面及內部絕緣之特性，故其可應用於光偵測材料。在本研究中，利用兩階段製程法，包括：石英爐管熱化學氣相沉積法及磁控濺鍍法，製備純Bi2Se3及Ag@Bi2Se3奈米片。藉由X-光繞射儀、高解析穿透式電子顯微鏡及拉曼光譜儀確認奈米片之晶體結構為rhombohedral Bi2Se3。場發射掃描式電子顯微鏡之成分分析光譜、x-光光電子能譜儀及高解析穿透式電子顯微鏡則確認了Ag以結晶的方式披覆在Bi2Se3奈米片的表面。隨著Ag披覆量的增加，Bi2Se3在UV-visible範圍內的光收率是隨之下降。在無外加偏壓的光電流量測結果中發現到Ag為光電流的顯著影響。在Ag的批覆量為7.1at.%時，UV光或可見光產生的光電流是純Bi2Se3奈米片的4.25及4.57倍。而在Ag為7.1at%時，可見光產生了1.72倍大於UV光照射下產生的光電流。造成光電流提升的原因可歸因於：(1) Bi2Se3小的能隙(0.35eV)、(2)Ag/Bi2Se3之間產生的蕭基場、(3)Ag引起的表面電漿共振效應及(4)Ag/ Bi2Se3之間良好的傳導性。故此研究發現適當的Ag量披覆對於提高Bi2Se3奈米片在UV及可見光範圍的光電流是有正面效益。 Bi2Se3 is a topological quantum material that is used in photodetectors, owing to its narrow bandgap, conductive surface, and insulating bulk. In this work, Ag@Bi2Se3 nanoplatelets were synthesized on Al2O3(100) substrates in a two-step process of thermal evaporation and magnetron sputtering. X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) revealed that all samples had the typical rhombohedral Bi2Se3. Field-emission scanning electron microscopy (FESEM)-energy dispersive x-ray spectroscopy (EDS), XPS, and HRTEM conﬁrmed the presence of the precipitated Ag. The optical absorptance of Bi2Se3 nanoplatelets in UV-visible range decreased with the Ag contents. Results of photocurrent measurements under zero-bias conditions revealed that the deposited Ag affected photosensitivity. A total of 7.1 at.% Ag was associated with approximately 4.25 and 4.57 times higher photocurrents under UV and visible light, respectively, than 0 at.% Ag. The photocurrent in Bi2Se3 at 7.1 at.% Ag under visible light was 1.72-folds of that under UV light. This enhanced photocurrent is attributable to the narrow bandgap (~0.35 eV) of Bi2Se3 nanoplatelets, the Schottky ﬁeld at the interface between Ag and Bi2Se3, the surface plasmon resonance that is caused by Ag, and the highly conductive surface that is formed from Ag and Bi2Se3. This work suggests that the appropriate Ag deposition enhances the photocurrent in, and increases the photosensitivity of, Bi2Se3 nanoplatelets under UV and visible light.
顯示於類別:	[化學工程與材料工程學系暨碩士班] 研究計畫

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