Structure and Photoluminescence Properties of Thermally Synthesized V2O5 and Al-Doped V2O5 Nanostructures

CCUR > College of Natural Science and Engineering > College of Engineering > Department of Chemical & Materials Engineering > journal articles > Item 987654321/49514

Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/49514

Title:	Structure and Photoluminescence Properties of Thermally Synthesized V2O5 and Al-Doped V2O5 Nanostructures
Authors:	Wang, CC (Wang, Chih-Chiang) Lu, CL (Lu, Chia-Lun) Shieu, FS (Shieu, Fuh-Sheng) Shih, HC (Shih, Han C.)
Contributors:	化材系
Keywords:	Al-doped V2O5 nanostructures photoluminescence vapor-solid mechanism
Date:	2021
Issue Date:	2021-04-24 14:46:05 (UTC+8)
Abstract:	Al-free and Al-doped V2O5 nanostructures were synthesized by a thermal-chemical vapor deposition (CVD) process on Si(100) at 850 degrees C under 1.2 x 10(-1) Torr via a vapor-solid (V-S) mechanism. X-ray diffraction (XRD), Raman, and high-resolution transmission electron microscopy (HRTEM) confirmed a typical orthorhombic V2O5 with the growth direction along [110]-direction of both nanostructures. Metallic Al, rather than Al3+-ion, was detected by X-ray photoelectron spectroscopy (XPS), affected the V2O5 crystallinity. The photoluminescence intensity of V2O5 nanostructure at 1.77 and 1.94 eV decreased with the increasing Al-dopant by about 61.6% and 59.9%, attributing to the metallic Al intercalated between the V2O5-layers and/or filled in the oxygen vacancies, which behaved as electron sinks. Thus the Al-doped V2O5 nanostructure shows the potential applications in smart windows and the electrodic material in a Li-ion battery.
Relation:	MATERIALS 卷冊: 14 期: 2 文獻號碼: 359
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	260	View/Open

View Licence