Electrically programmable magnetoresistance in AlOx-based magnetic tunnel junctions

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题名:	Electrically programmable magnetoresistance in AlOx-based magnetic tunnel junctions
作者:	Hong, JY (Hong, Jhen-Yong) Hung, CF (Hung, Chen-Feng) Yang, KHO (Yang, Kui-Hon Ou) Chiu, KC (Chiu, Kuan-Chia) Ling, DC (Ling, Dah-Chin) Chiang, WC (Chiang, Wen-Chung) Lin, MT (Lin, Minn-Tsong)
贡献者:	光電物理學系
日期:	2021-12
上传时间:	2021-04-14 13:22:43 (UTC+8)
摘要:	We report spin-dependent transport properties and I-V hysteresis characteristics in an AlOx-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the AlOx layer. The role played by oxygen vacancies in AlOx is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single AlOx-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.
關聯:	SCIENTIFIC REPORTS 卷冊: 11 期: 1 文獻號碼: 6027
显示于类别:	[光電物理系] 期刊論文

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