Enhanced optoelectronic properties of thermally evaporated Sb-doped ZnO nanowires via defect structures

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题名:	Enhanced optoelectronic properties of thermally evaporated Sb-doped ZnO nanowires via defect structures
作者:	Wang, CC (Wang, Chih-Chiang) Lin, WC (Lin, Wei-Chen) Shieu, FS (Shieu, Fuh-Sheng) Shih, HC (Shih, Han C.)
贡献者:	化材系
关键词:	ZINC-OXIDE POINT-DEFECTS THIN-FILMS LUMINESCENCE GROWTH
日期:	2019-12-01
上传时间:	2020-01-20 14:47:39 (UTC+8)
摘要:	Sb-doped ZnO nanowires were fabricated on Si (100) substrates by thermal evaporation via the vapor-liquid-solid mechanism at 850 degrees C, and their optoelectronic properties were examined. Two prominent emission regions at the near band-edge emission and deep-level emission of the pure ZnO nanowires were observed in the photoluminescence spectra. Doping with Sb reduced the intensities of near band edge emission and deep-level emission. Almost no near band-edge emission signal was obtained at Sb >= 2.2 at. % and almost no deep-level emission signal was obtained at Sb >= 5.46 at. %, owing to the formation of metallic Sb and the +5 oxidation state of the Sb2O5 phases. These results suggest that the Sb dopant content is the critical factor in improving the optoelectronic properties of Sb-doped ZnO nanowires, as revealed by their photoluminescence spectra.
關聯:	AIP ADVANCES 卷冊: 9 期: 12 文獻號碼: 125019
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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