Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures

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题名:	Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures
作者:	Wang, CC (Wang, Chih-Chiang) Lu, CL (Lu, Chia-Lun) Shieu, FS (Shieu, Fuh-Sheng) Shih, HC (Shih, Han C.)
贡献者:	化材系
关键词:	Ga-doped V2O5 nanorods Photoluminescence Vapor-solid mechanism
日期:	2020-01
上传时间:	2020-01-20 13:44:56 (UTC+8)
摘要:	Ga-doped V2O5 nanorods were fabricated by thermal evaporation at 850 degrees C using the V-S mechanism. XRD and XPS reveal that the Ga was doped into the V2O5 crystal structures and that a Ga-O phase was formed. HRTEM revealed the growth of Ga-free and Ga-doped nanorods in the [1 1 0] direction. Photoluminescence properties indicated that Ga at 0.5 wt% increased the luminescence intensities at 1.77 and 1.94 eV by factors of 1.65 and 1.82, whereas Ga > 1 wt% reduced the intensities. These results suggest that the interstitial Ga and Ga-O phases influence the photoluminescence properties of V2O5 nanorods.
關聯:	CHEMICAL PHYSICS LETTERS 卷冊: 738 文獻號碼: 136864
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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