Low-resistivity oxides in TixFeCoNi thin films after vacuum annealing

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Title:	Low-resistivity oxides in TixFeCoNi thin films after vacuum annealing
Authors:	Yang, YC (Yang, Ya-Chu) Tsau, CH (Tsau, Chun-Huei) Yeh, JW (Yeh, Jien-Wei) Che, SK (Che, Swe-Kai)
Contributors:	化學工程與材料工程學系暨奈米材料研究所
Keywords:	ELECTRICAL-PROPERTIES RUO2 SI
Date:	2018
Issue Date:	2019-01-22 11:41:49 (UTC+8)
Abstract:	In this study, we investigated the electrical properties and microstructures of FeCoNi, Ti0.5FeCoNi, and TiFeCoNi thin films, with the aim of identifying new oxygen-deficient oxides with low resistivity. The resistivity values of as-deposited FeCoNi, Ti0.5FeCoNi, and TiFeCoNi films were 1089, 2883, and 5708 mu Omega-cm, respectively. After vacuum annealing at 1000 degrees C for 30 min, the resistivity values plummeted to 20.4, 32.1, and 45.4 mu Omega-cm, respectively. Transmission electron microscope (TEM) analysis revealed that all of the as-annealed films were in the form of an oxygen-deficient oxide/metal composite with layered structure. The resistivity of these oxides is lower than that of indium tin oxide (ITO). They represent a new category of low-resistivity oxides.
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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