氧化銦奈米結構的成長方式包含化學氣沉積法、碳熱還原法等方式，而〝高產量＂的成長結果則是將奈米結構製造成為電特性元件所不可或缺的重要因素。本實驗以化學氣相沉積法（CVD）的方式成功的合成大量氧化銦八面體奈米結構，透過掃描式電子顯微鏡的觀察，粒徑長度介於600-1600nm 之間。由穿透式電子顯微鏡得知氧化銦八面體為單晶結構，x光繞射儀顯示出（222）、（400）、（440）為其三個主要繞射面，將繞射峰值與JCPDS卡對照後證實了該結構為氧化銦八面體、體心立方（bcc）結構，氧化銦的八面體則能應用在場發射顯示器上。
Indium oxide nanostructures have been prepared via well-developed methods, including chemical vapor deposition(CVD) and carbothermal reduction.High yields are critical in order to fabricate nanostructures into devices for electrical characterizations.In this work a high yield of In(subscript 2)O(subscript 3) octahedra were synthesized by the CVD method, octahedra with 600-1600 nm in lengths are observed by scanning electron microscopy(SEM).While transmission electron microscope(TEM) image revealed that In(subscript 2)O(subscript 3) octahedra are single crystalline. X-ray diffraction spectra(XRD) indicated that (222),(400) and (440) are the major diffraction planes. XRD peaks of the sample are then compared with the JCPDS card revealing that the In(subscript 2)O(subscript 3) octahedron structure is body-centered cubic. In(subscript 2)O(subscript 3) octahedra are believed to have potential applications in field emission display.
