本論文主要以陽極氧化電化學蝕刻法成功於P型矽基板上研製出一具有綠色發光特性之多孔矽薄膜。其主要關鍵在於控制給定之電流條件，以控制所獲得之多孔矽之奈米結構。再以光激發光譜儀（MAPLE PL）檢測不同結構下之強度與波長，再利用掃描式電子顯微鏡（SEM）觀察其表面結構。
In this study, the manufacture of electrochemical anodization for porous silicon and its green light emission property were reported. The key point was the control of applied bias parameters for finally etching nanostructure of PS membrane. The measurements of scanning electro microscopy (SEM) and photoluminescence spectra were utilized to analyze. Experimental results indicated that the decrease in PL property was observed while the obtained PS membrane was exposed in atmospheric environment. Besides, a blue-shift on PL property was also discovered with increase in exposing time.
