文化大學機構典藏 CCUR:Item 987654321/2704
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    題名: Light emission and negative differential conductance of n-type nanoporous silicon with buried p-layer assistance
    作者: Lin, Jia-Chuan;Tsai, Wei-Chih;Chen, Wei-Lun
    貢獻者: 材料所
    日期: 2007
    上傳時間: 2009-11-16 10:32:39 (UTC+8)
    摘要: The light-emission and current-voltage properties of n-type nanoporous silicon (n-NPS) with a hole assistance of buried p layer are explored. The influences of anodic current density on the formation, morphology, and properties of n-NPS are measured. Such n-NPS films have nanoscaled pores and high-aspect-ratio pillars. Since the anisotype junction is forward biased during the anodization process, many holes can drift straightupward from p layer and participate in the electrochemical reaction. At room temperature, high peak-to-valley current ratios of about 117.3 can be obtained in negative difference conductance region as well as strong visible light emissions are clearly observed under ultraviolet excitation.(c) 2007 American Institute of Physics.
    關聯: APPLIED PHYSICS LETTERS Volume: 90 Issue: 9 Article Number: 091117
    顯示於類別:[化學工程與材料工程學系暨碩士班] 期刊論文

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