The pure elements Ti, Zr, Cr, Nb were selected to produce an TiCrZrNb alloy target and deposited thin films thereof by a reactive high vacuum DC sputtering process. Nitrogen was used as the reactive gas to deposit the nitride thin films. The effect of nitriding on the properties of the TiCrZrNbNx film was tested by changing the nitrogen ratio of the atmosphere. All of the as-deposited TiCrZrNbNx nitride films exhibited an amorphous structure. The film thickness decreases by increasing the N-2 flow rate, because the Ar flow rate decreased and the target was poisoned by nitrogen. The hardness and Young's modulus were also measured by a nano-indenter. The hardness and Young's modulus of the TiCrZrNbNx nitride films were all lower than those of a TiCrZrNb metallic film.