English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 46833/50693 (92%)
造訪人次 : 11846580      線上人數 : 675
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    主頁登入上傳說明關於CCUR管理 到手機版


    請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/2618


    題名: Electrical properties of pressure quenched silicon by thermal spraying
    作者: Tan, S. Y.
    Gambino, R. J.
    Sampath, S.
    Herman, H.
    貢獻者: 電機系
    關鍵詞: plasma spray
    polycrystalline silicon
    electrical properties
    metastable phase silicon
    semiconductor
    日期: 2007
    上傳時間: 2009-11-09 10:24:00 (UTC+8)
    摘要: High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on < 100 > orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polyrnorphic silicon is higher at deposit/ substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polyrnorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p(-) silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon. (C) 2007 Elsevier B.V. All rights reserved.
    關聯: THIN SOLID FILMS Volume: 515 Issue: 20-21 Pages: 7744-7750
    顯示於類別:[電機工程系] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbText984檢視/開啟


    在CCUR中所有的資料項目都受到原著作權保護.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋