| 摘要: | 在本論文研究中使用N-Type Silicon進行HF電化學蝕刻，透過蝕刻時間與蝕刻電流的改變以獲得不同表徵結構之多孔矽。首先以掃描式電子顯微鏡(SEM)觀察多孔矽的表徵結構，再將多孔矽進行不同環境(真空、O2、Ar、N2)的退火處理後進行分析。多孔矽在經由不同退火製程後主以下列五項分析進行探討。
第一部分先以特定波長(日光、UV-254nm、UV-365nm、He-Cd-325nm)的外來光源對經不同退火製程後的多孔矽進行光激發光學分析，多孔矽透過光激發後可發現表面會呈現明顯的橙色光，且隨著不同退火製程的溫度提升會使橙色激發光消失。第二部分則是將不同退火製程後的多孔矽進行PL光譜分析，在PL光譜中可發現多孔矽隨著不同退火製程的溫度提升後，激發光的相對波長會往短波長移動呈現藍位移現象，且激發光的相對強度會隨著不同退火製程的溫度提升而降低。
第三部分以傅里葉轉換紅外光譜儀(FTIR)對不同退火製程後的多孔矽進行分析，在FTIR光譜中可獲得多孔矽經由不同退火製程後的鍵結型態與鍵結成份。第四部分是透過拉曼光譜(RAMAN)對不同退火製程後的多孔矽進行分析，由拉曼光譜中可發現Si-Si的極化鍵結強度會隨著退火溫度的提升而產生變化。第五部分利用X光繞射分析儀(XRD)對不同退火製程後的多孔矽進行分析，在X光繞射光譜中可得知多孔矽中Si與O於後處理時所優取的結晶生長晶向。最後我們綜合比較分析多孔矽於不同退火製程(真空、O2、Ar、N2)後光激發的光學特性(PL＆UV)、鍵結成份與鍵結型態(FTIR)、Si-Si鍵結的極化強度（RAMAN）、晶向生長信息(XRD)等進行探討。
In this study, the porous silicon was fabricated by using electrochemical etching N-Type silicon. The anodization electrochemical etching from hydrofluoric acid and alcohol mixture solution in the Teflon container. When the etching time and etching current are changed, and then we getting different structural of porous silicon. We observed the surface and cross-section image by scanning electron microscope (SEM) measurement, and then the porous silicon in all kinds of annealing processes (vacuum, O2, Ar, N2) are analyzed. The detection of annealing processes is discussed on the porous silicon. Five topics are focused as follows.
In the first part, the specific wavelength of light (sunlight, UV-254nm, UV-365nm He-Cd-325nm) was used for optical excitation on annealed porous silicon. The porous silicon can emit orange light, but as increase the annealing temperature that can't emit light. In the second part, by Photoluminescence (PL) spectra, we found that the increase on the annealing temperature, the relative wavelength of excitation light will blue shift, however the light intensity will decline.
In the third part, through the Fourier Transform Infrared Spectroscopy (FTIR) analysis, we found that the increase in the annealing temperature, the bonding patterns and the bonding ingredients had different information in all kinds of annealing process (vacuum, O2, Ar, N2). In the fourth part, the Si-Si bonding polarization intensity and bonding patterns by Raman Scattering Spectrometer (RAMAN) spectra in all kinds of annealing processes were studied. In the fifth part, we used X-Ray Diffraction (XRD) spectra to obtain the information of crystal growth and lattice spacing in all kinds of annealing processes.
Finally we mutually compared the surface and cross-section structure (SEM), optical excitation properties (PL & UV), bonding components and patterns (FTIR), Si-Si bonding polarization intensity (RAMAN), crystal growth information (XRD) in all kinds of annealing processes, to further understand the relationship of the annealing temperature on the porous silicon structures. |
