Ultrahigh-Density beta-Ga2O3/N-doped beta-Ga2O3 Schottky and p-n Nanowire Junctions: Synthesis and Electrical Transport Properties

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Title:	Ultrahigh-Density beta-Ga2O3/N-doped beta-Ga2O3 Schottky and p-n Nanowire Junctions: Synthesis and Electrical Transport Properties
Authors:	Chang, LW (Chang, Li-Wei) Li, CF (Li, Ching-Fei) Hsieh, YT (Hsieh, Yun-Tsung) Liu, CM (Liu, Chia-Ming) Cheng, YT (Cheng, Yi-Ting) Yeh, JW (Yeh, Jien-Wei) Shih, HC (Shih, Han C.)
Contributors:	Dept Chem & Mat Engn
Keywords:	GALLIUM NITRIDE NANOWIRES LIGHT-EMITTING-DIODES OXIDE NANOWIRES GA2O3 NANOWIRES THIN-FILMS SILICON DEVICE FABRICATION PHOTODETECTORS LUMINESCENCE
Date:	2011
Issue Date:	2013-02-18 13:18:37 (UTC+8)
Abstract:	We describe the fabrication of ultrahigh-density beta-Ga2O3 Schottky and N-doped beta-Ga2O3/beta-Ga2O3 p-n nanowire junctions via microwave plasma enhanced chemical vapor deposition and thermal chemical vapor deposition. The electron transport mechanisms with Schottky and p-n nanowire junctions were characterized by current-voltage (I-V-sd) measurements. The I-V-sd curve of different amount of the nanowires is greatly influenced by the potential barriers on the gap of Schottky nanowire junctions. N-2 plasma treatment led to rectifying electrical characteristics, suggesting that near surface was compensated by ion-induced deep-level states, which can be verified by cathodoluminescence spectrum. The current transport through p-n nanowire junctions is dominated by the deep-level-assisted tunneling mechanism for -0.8 V < V-sd < 0.6 V and by the space-charge limited conductive mechanism beyond 0.6 V. The detailed I-V-sd characteristics of the p-n nanowire junctions have been investigated in the temperature range 323-373 K. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3530787] All rights reserved.
Relation:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 3 頁數: D136-D142
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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