Both electron and hole concentrations vary within the semiconductor physics. However, most analytical models existing today do not consider this problem, thus fail to distinguish between the active, bipolar, and MOS structures. In this paper a new equivalent circuit model is constructed within a multi-MOS model for simulation of IGBT (Insulated Gate Bipolar Transistor) current sensors. It takes into account both electron and hole currents in IGBTs and the doping variation in MOS body. The simulation is conducted with SPICE3 for three types of current sensors, namely active, bipolar, and MOS current sensors. The results agree well with the current sensing measurement.
