In this study, porous silicon films are fabricated by electrochemical etching on crystalline silicon substrates. The microstructures of porous silicon films are analyzed. Also, the unique photoelectronic properties and their applications are researched. Using electrochemical etching equipment with O-rings, electrodes, teflon tubes and plates, crystalline silicon can be etched to form a porous film. Under an ultraviolet light illumination, the porous silicon samples have strong photoluminescence (PL) properties. When the porous silicon film was annealed in the temperature range of 700-840℃, some structure variations are observed. In our experiment, the micorstructure of porous silicon films are analyzed by Field Emission Scanning Electron Microscope (FESEM), photoluminescence spectrometer (PL) and semiconductor devices parameter measurement system.
