When CMOS nanometer technology came, because of poly-Silicon has high resistivity and depletion effect, we have to find new materials to replace poly-Silicon gate. Metal gate might be the only way to solve these problems. It has some advantages over poly-Si gate, such as no poly-Si depletion effect, and has low gate resistivity. Because metal gate still has many problems that have to be overcome, now we use NiSi which character is the most approach to metal gate to replace it. In this work, we use NiSi gate to replace poly-Silicon gate, the gate oxide's material is still SiO2, and investigate the characteristics when CMOS in different gate lengths. This work used ISE-TCAD to simulate CMOS devices. We use Ni-FUSI gate as metal gate. Changing the gate length and the voltage to know whether it can improve the problems about metal gate have, such as power dissipation and hardly compatible with high-k.
