In this study, silicon-tips with high-aspect-ratio can be obtained by electrochemical anodization. During the anodization process, three-dimensional solenoidal-type electrodes are originally designed instead of conventional plate-type electrodes in the experiments. The solenoidal-type electrode can produce a spatial variation of electrical field which causes a period variation of etching depth and a silicon-tip structure. The silicon-tip structures can be widely used in field-emission device applications. It is also interesting that the number of coils would affect the silicon-tip structures. To get a further exploration, the microstructure analysis on silicon-tip film is studied by SEM for comparing the difference cases between the solenoidal-type and conventional plate-type electrodes. In addition, the photoluminescence properties of such silicon-tip films are investigated by PL system.
