In this work, the material characteristics of the n-type silicon wafer with wet-etching technology of electrochemical anodization were proposed. The experiments including film thickness and properties of fabricated surface porous silicon were measured. Through a suitable etching-parameter, a studied sample with triple-layer structure which consisting of diverse pores was obtained and measured by SEM measurement. For clarifying this structure, the surface profile and photoluminescence characteristics which including wavelength and intensity for each porous-layer of fabricated triple-structure were measured by 3D-Profiler (Micro-Figure Measuring Instrument) and Maple-PL, respectively.
The experimental results indicated that the light emission intensity of fabricated porous silicon layer would be decreased with decrease in pores. Furthermore, we observed a particular trend that the measured wavelength points according to the intensity peak were identical for each thickness of studied porosity. This phenomenon would be a useful viewpoint in further material analysis of the porous silicon powder.
