由於前導實驗中已發現以TiFeCoNi 合金靶材及物理氣相沉積法(PVD)濺鍍的 TiFeCoNi 合金薄膜經過適度氧化形成的氧化物薄膜，具備室溫低電阻的特性。此薄膜置於真空熱處理爐中進行高溫熱處理，在低氧含量下所得缺氧的氧化物薄膜竟可得到極低的室溫電阻，其電阻係數只有35±3 -cm，僅為純銅電阻的20 倍，不但低於ITO 薄膜的最低值，且與目前文獻記載之室溫最低電阻之RuO2 單晶相同，部分研究結果已發表於國際期刊(Scripta Materialia)。有鑑於這些過渡族元素多元下竟有如此的表現，且此類薄膜對於太陽能、顯示面板的導電膜及建築視窗的節能熱反射膜極具應用潛力，所以本兩年計劃即以此為基礎，並擴展至更多元的高熵氧化物，將對不同氧化程度的結晶、微結構、電性、載子濃度、移動率、能隙及機械性質作測試分析，除探討室溫低電阻的形成機制外，並開發其他更低電阻的高熵合金氧化物，以增進應用。
In our previous study, we found that the TiFeCoNi thin films became to oxide films with extremely low electric resistivity after suitable high-temperature annealing under a low oxygen-content atmosphere. The lowest resistivity of the TiFeCoNiOx film is only 35±3 -cm. This value is close to those of most metallic alloys, and it equals to that of RuO2 single crystal, and lowers than that of ITO films. Part of this study was published in Scripta Materialia. This two-year project based on the effect of these elements on electric resistivity of the high-entropy alloy, and the application potential of the oxide films, such as the devices of solar cells, the conduction films of displayers, the reflective films of the energy saving windows. This project will investigate the new alloys contenting more elements, and study the crystallography, microstructures, electric properties, the densities and the mobility of the carriers, energy gaps and mechanical properties of the films under different degrees of oxidation. Moreover, developing new high-entropy alloy oxides with low resistivity and promoting their applications will also be contented in this project.
