White-light emissions from p-type porous silicon layers by high-temperature thermal annealing

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题名:	White-light emissions from p-type porous silicon layers by high-temperature thermal annealing
作者:	Tsai, WC (Tsai, W. -C.) Lin, JC (Lin, J. -C.) Huang, KM (Huang, K. -M.) Yang, PY (Yang, P. -Y.) Wang, SJ (Wang, S. -J.)
贡献者:	化材所
关键词:	THIN-FILMS PHOTOLUMINESCENCE LUMINESCENCE ANODIZATION MECHANISM ORIGIN
日期:	2009-01
上传时间:	2011-12-09 15:24:35 (UTC+8)
摘要:	In this study, the white-light emissions, including red, green and blue colors, appearing on the same porous silicon samples are originally introduced by a thermal-annealing method. The SEM, FTIR, and PL are discussed for different annealing temperature cases. The FTIR is used to monitor the chemical bonding structures of the PS samples under different annealing temperatures. The results show that the variation of chemical bonding relates to the variation of the emission wavelength. The emission intensities of the blue-green-light components are enhanced with the increase of annealing temperature. The PL spectra cover the entire visible region under the excitations of He-Cd laser beam, and a strong white-light emission can be observed by the naked eye at room temperature. Copyright (C) EPLA, 2009
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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