Dopant enhanced in nickel silicide formation for high-k dielectric applications

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 電機工程系 > 期刊論文 > Item 987654321/20887

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/20887

题名:	Dopant enhanced in nickel silicide formation for high-k dielectric applications
作者:	Tan, SY (Tan, S. Y.)
贡献者:	電機系
关键词:	KAPPA GATE DIELECTRICS NI-SILICIDE WORK FUNCTION CMOS WORKFUNCTION TECHNOLOGY PERFORMANCE MOSFETS IMPACT NODE
日期:	2010-11
上传时间:	2011-12-09
摘要:	The thermal stability of fully silicided NiSi with arsenic doping on silicon was investigated. The combination of full nickel silicidation gate electrodes and hafnium based high-k gate dielectrics is one of the most promising gate stacks to replace poly-Si/SiO(2)/Si gate stacks in the future complementary metal-oxide-semiconductor (CMOS) sub-45 nm technology node. The aims of the work were to investigate the Ni silicide phase-related issues associated with arsenic dopant and thermal annealing on Ni-FUSI/HfO(2)/Si and Ni-FUSI/HfSiO/Si gate stacks. It was found that arsenic-incorporation demonstrated some improvement in both morphology and phase stability of nickel silicided films at high processing temperatures regardless underlying gate dielectrics. The correlations of Ni-Si phase transformation and arsenic doapnt with their electrical and physical changes were established by sheet resistance measurements, X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) analysis. Furthermore, the modulation of the work function (WF) of Ni fully silicided gates by arsenic impurity is presented, comparing the effects of dopant (As) on the WF and silicide phases (NiSi and NiSi(2)). It confirmed that the work function of NiSi can be tuned by implanting arsenic dopant, but it ineffective for NiSi(2) phase.
显示于类别:	[電機工程系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	595	检视/开启

在CCUR中所有的数据项都受到原著作权保护.

数据加载中.....