The Sb-doped SnO(2) (ATO) nanowires have been synthesized on an alumina substrate using thermal evaporation with various growth durations of 1, 1.5 and 2 h. The morphology and structure of Sb-doped SnO(2) nanowires were characterized by a field emission scanning electron microscope (FESEM), an X-ray diffraction (XRD) spectrometer and a transmission electron microscope (TEM). Chemical composition and bonding were investigated by X-ray photoelectron spectroscopy (XPS), which shows that the Sb concentration of the nanowires increases with increasing growth durations. It is found that the electrical conductance of a single AID nanowire- and nanowire films-based devices both increase with growth durations. Additionally, the photon-sensing measurement shows that the photon-sensing properties are improved with increasing growth durations, which provides a practicable method for the fabrication of ATO nanowire-based photodetectors. (C) 2010 Published by Elsevier B.V.
